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2SB1508 - PNP Transistor

General Description

Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -6A Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD2281 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -6A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2281 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -25 A 3 W 45 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1508 isc website：www.