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2SB1508 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=.
  • 0.5V (PNP), 0.4V (NPN) max.
  • Wide ASO and highly registant to breakdown.
  • Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1508/2SD2281] ( ) : 2SB1508 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO I.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB1507 PNP/NPN Epitaxial Planar Silicon Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3714 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1508/2SD2281 50V/12A High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting.