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2SB1551 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) High DC Current Gain Built-in resistor between base and emitter Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier a

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in resistor between base and emitter ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1551 isc website：www.iscsemi.