2SB1551 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in resistor between base and emitter ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;.
