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2SB1607 - PNP Transistor

General Description

Large Collector Current Satisfactory Linearity of Foward Current Transfer Ratio Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -5A Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Complement to Typ

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isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION ·Large Collector Current ·Satisfactory Linearity of Foward Current Transfer Ratio ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -5A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Complement to Type 2SD2469 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and general purpose applications.