2SB1607
2SB1607 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220F package
- Large collector current IC
- Low collector saturation voltage.
- plement to type 2SD2469 APPLICATIONS
- For power switching applications PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -7 -15 40 W UNIT V V V A A
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10m A ; IB=0 IC=-5A ; IB=-0.25A IC=-5A ; IB=-0.25A VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-0.5A ; VCE=-10V;f=10MHz 45 90 MIN -80
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 f T
TYP.
UNIT V
-0.5 -1.5 -10 -50
V V µA µA
260 30 MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A; IB1=-IB2=-0.3A 0.5 1.5 0.1 µs µs µs h FE-2 classifications Q 90-180 P 130-260
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
Savant IC Semiconductor
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