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2SB407 - PNP Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min) Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.) @IC= -6A Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power ampli

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Datasheet Details

Part number 2SB407
Manufacturer INCHANGE
File Size 199.70 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.) @IC= -6A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature -7 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB407 isc website：www.iscsemi.
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