2SB407 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB407 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A; VCE=-1.5V -30 V Collector-base breakdown voltage -30 V Emitter-base breakdown voltage -10 V Collector-emitter saturation...