Datasheet Details
| Part number | 2SB511 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.69 KB |
| Description | PNP Transistor |
| Datasheet | 2SB511-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB511.
| Part number | 2SB511 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.69 KB |
| Description | PNP Transistor |
| Datasheet | 2SB511-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -1.5A ·Complement to Type 2SD325 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 5W AF power amplifier output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 1.75 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A;
IB= -0.15A VBE(on) Base-Emitter On Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB511 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB512 | PNP Transistor |
| 2SB513 | PNP Transistor |
| 2SB515 | PNP Transistor |
| 2SB518 | PNP Transistor |
| 2SB519 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |