2SB511 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -1.5A Complement to Type 2SD325 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 5W AF power

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Datasheet Details

Part number	2SB511
Manufacturer	Inchange Semiconductor
File Size	214.69 KB
Description	PNP Transistor
Datasheet	2SB511 Datasheet

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isc Silicon PNP Power Transistor 2SB511 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -1.5A ·Complement to Type 2SD325 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 5W AF power amplifier output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 1.