Datasheet Details
| Part number | 2SB512 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.96 KB |
| Description | PNP Transistor |
| Datasheet | 2SB512-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SB512.
| Part number | 2SB512 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.96 KB |
| Description | PNP Transistor |
| Datasheet | 2SB512-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD365 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB512 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB511 | PNP Transistor |
| 2SB513 | PNP Transistor |
| 2SB515 | PNP Transistor |
| 2SB518 | PNP Transistor |
| 2SB519 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |