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2SB539 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High Power Dissipation- : PC= 100W(Max)@TC=25℃ Complement to Type 2SD287 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier a

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD287 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Recommended for 70~80W high-fidelity audio frequency amplifier output stage.