Datasheet Details
| Part number | 2SB539 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.49 KB |
| Description | PNP Transistor |
| Datasheet | 2SB539-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 2SB539 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.49 KB |
| Description | PNP Transistor |
| Datasheet | 2SB539-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD287 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
·Recommended for 70~80W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -15 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB539 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB539 | SILICON POWER TRANSISTOR | SavantIC |
| ETC | 2SB539A | NPN/PNP Silicon Transistor | ETC |
| ETC | 2SB539B | NPN/PNP Silicon Transistor | ETC |
| ETC | 2SB539C | NPN/PNP Silicon Transistor | ETC |
| Part Number | Description |
|---|---|
| 2SB530 | PNP Transistor |
| 2SB531 | PNP Transistor |
| 2SB532 | PNP Transistor |
| 2SB536 | PNP Transistor |
| 2SB537 | PNP Transistor |
| 2SB538 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |