2SB539 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IE=-1mA ;IC=0 IC=-6A; VCE=-5V 40 8 MIN -130 -5 2SB539 SYMBOL...