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2SB653 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High Power Dissipation- : PC= 60W(Max)@TC=25℃ Complement to Type 2SD673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier app

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Datasheet Details

Part number 2SB653
Manufacturer INCHANGE
File Size 207.12 KB
Description PNP Transistor
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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SD673 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB653 isc website：www.iscsemi.
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