2SB653 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IE=0 MIN -120 -120 -6 2SB653 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO TYP. MAX UNIT V V V -1.5 V...