Datasheet Details
| Part number | 2SB674 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SB674-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Darlington Power Transistor 2SB674.
| Part number | 2SB674 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SB674-INCHANGE.pdf |
|
|
|
·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SD634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB674 | Silicon PNP Transistor | Toshiba |
 |
2SB674 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB673 | PNP Transistor |
| 2SB675 | PNP Transistor |
| 2SB676 | PNP Transistor |
| 2SB677 | PNP Transistor |
| 2SB679 | Silicon PNP Power Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |