2SB674 - Silicon PNP Transistor

Toshiba

Key Features

High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A).
Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A).
Complementary to 2SD633, 2SD634 and 2SD635.

2SB674 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB674
Manufacturer	Toshiba
File Size	119.67 KB
Description	Silicon PNP Transistor
Datasheet	2SB674 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

: B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A) • Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A) • Complementary to 2SD633, 2SD634 and 2SD635. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. £to.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current 2SB673 2SB674 2SB675 2SB673 2SB674 2SB675 SYMBOL v CBO VcEO VEBO ic IB RATING -100 -80 -60 -100 -80 -60 -5 -7 -0.