Datasheet Details
| Part number | 2SB713 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SB713-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB713 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SB713-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SD751 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB713 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
IB= -0.7A VBE(on) Base -Emitter On Voltage IC= -7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB713 | SILICON POWER TRANSISTOR | SavantIC |
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