2SB713
2SB713 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
- Good Linearity of h FE
- High Power Dissipation
- plement to Type 2SD751
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power audio frequency amplifier use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
VCEO
Collector-Emitter Voltage
-140
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-9
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
Junction Temperature
-15
℃
Tstg...
