Datasheet Details
| Part number | 2SB719 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.59 KB |
| Description | PNP Transistor |
| Datasheet | 2SB719-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB719.
| Part number | 2SB719 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.59 KB |
| Description | PNP Transistor |
| Datasheet | 2SB719-INCHANGE.pdf |
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|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD759 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB719 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
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| 2SB720 | PNP Transistor |
| 2SB722 | PNP Transistor |
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| 2SB724 | PNP Transistor |