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2SB744 - PNP Transistor

General Description

High Collector Current -IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) Complement to Type 2SD794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in audio frequency amplifier.

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isc Silicon PNP Power Transistor 2SB744 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·Complement to Type 2SD794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1 -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.