2SB744 Datasheet PDF

FEATURES

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● omponents 20736 Marilla Street Chatsworth ! "# $ % ! "# 2SB744 Capable of 10Watts of Power Dissipation. Collector-current 3.0A Collector-base Voltage 70V O Operating and storage junction temperature range: -55 C to O +150 C PNP Silicon Power Transistor

MAXIMUM RATINGS

Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 45 70 5.0 3.0 10 -55 to +150 -55 to +150 Unit V V V A W O C O C D A K R E B F G L M N P

ELECTRICAL CHARACTERISTICS

@ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Sustaining Voltage (IC=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (IC=1.0mAdc, IE=0) Emitter-Base Breakdown Voltage (IE=1.0mAdc, IC=0) Forward Current Transfer ratio (IC=20mAdc, VCE=5.0Vdc) Forward Current Transfer ratio (IC=0.5Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=1.5Adc, IB=0.15Adc) Min 45 70 5.0 Max ------Units Vdc Vdc H C OFF CHARACTERISTICS VCEO(SUS) V(BR)CBO V(BR)EBO 1 2 J 3 J Q EMITTER COLLECTOR BASE Vdc PIN 1.