2SB744 Datasheet | Micro Commercial Components

Features - - - - omponents 20736 Marilla Street Chatsworth !"# $ % !"# Capable of 10Watts of Power Dissipation. Collector-current 3.0A Collector-base Voltage 70V O Operating and storage junction temperature range: -55 C to O +150 C PNP Silicon Power Transistor Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 45 70 5.0 3.0 10 -55 to +150 -55 to +150 Unit V V V A W O C O C .. Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Sustaining Voltage (IC=1.0m Adc, IB=0) Collector-Base Breakdown Voltage (IC=1.0m Adc, IE=0) Emitter-Base Breakdown Voltage (IE=1.0m Adc, IC=0) Forward Current Transfer ratio (IC=20m Adc, VCE=5.0Vdc) Forward Current Transfer ratio (IC=0.5Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=1.5Adc, IB=0.15Adc) Min 45 70 5.0 Max ------Units Vdc Vdc OFF CHARACTERISTICS VCEO(SUS) V(BR)CBO V(BR)EBO 1 2 J 3 J Q EMITTER COLLECTOR BASE Vdc PIN 1. PIN 2. PIN 3. ON CHARACTERISTICS h FE(1) h FE(2) VCE(sat) 30 60 ----320 2.0 ----Vdc ! .mccsemi. Revision: 2...