Datasheet Details
| Part number | 2SB825 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.54 KB |
| Description | PNP Transistor |
| Datasheet | 2SB825-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB825.
| Part number | 2SB825 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.54 KB |
| Description | PNP Transistor |
| Datasheet | 2SB825-INCHANGE.pdf |
|
|
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·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving, high speed inverter and converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB825 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SB823 | PNP Transistor |
| 2SB824 | PNP Transistor |
| 2SB826 | PNP Transistor |
| 2SB827 | PNP Transistor |
| 2SB828 | PNP Transistor |
| 2SB829 | PNP Transistor |
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |