Datasheet4U Logo Datasheet4U.com

2SB825 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low saturation voltage : VCE(sat)=(.
  • )0.4V max.
  • Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Par.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB825 PNP Transistor INCHANGE
2SB821 Silicon PNP Power Transistors Inchange Semiconductor
2SB822 Medium power Transistor Rohm
2SB823 PNP Transistor INCHANGE
2SB824 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB824 PNP/NPN Epitaxial Planar Silicon Transistors
2SB826 PNP/NPN Epitaxial Planar Silicon Transistors
2SB827 PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB828 PNP/NPN Epitaxial Planar Silicon Transistors
2SB829 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low saturation voltage : VCE(sat)=(–)0.4V max.