Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
Good Linearity of hFE
Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -3A
Complement to Type 2SD960
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Des
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isc Silicon PNP Power Transistor
2SB868
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD960 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SB868 Datasheet
