Datasheet Details
| Part number | 2SB868 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SB868-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB868.
| Part number | 2SB868 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SB868-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD960 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB868 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |
| 2SB817E | PNP Transistor |