2SB868 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; VCE=-10V 45 60 30 MIN -80 2SB868 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1...