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2SB896 - PNP Transistor

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Collector-Emitter BreakdownVoltage- : V(BR)CEO= -40V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.6(Max.) @IC= -7A High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

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Datasheet Details

Part number 2SB896
Manufacturer INCHANGE
File Size 184.54 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB896 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -40V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -0.6(Max.) @IC= -7A ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
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