2SB896 Overview
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB896 IC=-10mA; IE=0 CONDITIONS SYMBOL 2SB896 2SB896A MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.6 -1.5 V V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB896 2SB896A ICBO Collector cut-off current -50 VCB=-50V;.
