Datasheet4U Logo Datasheet4U.com

2SB993 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) Collector Power Dissipation- : PC= 40W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -4A Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable op

📥 Download Datasheet

Datasheet preview – 2SB993

Datasheet Details

Part number 2SB993
Manufacturer INCHANGE
File Size 212.28 KB
Description PNP Transistor
Datasheet download datasheet 2SB993 Datasheet
Additional preview pages of the 2SB993 datasheet.

📁 Similar Datasheet

  • 2SB993 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB993 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB992 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB992 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB994 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB994 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB995 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB995 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB996 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB997 - Silicon PNP Transistor (Toshiba)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -4A ·Complement to Type 2SD1363 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications.
Published: |