. High Collector Current : Ic 7A
. Low Collector Saturation Voltage
: VC E(sat)=-0.4V(Max. ) (at Ic=-4A) . High Collector Power Dissipation
: P C=40W (at Tc=25°C) . Complementary to 2SD1363.
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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB993
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES
—. High Collector Current : Ic 7A
. Low Collector Saturation Voltage
: VC E(sat)=-0.4V(Max.) (at Ic=-4A) . High Collector Power Dissipation
: P C=40W (at Tc=25°C) . Complementary to 2SD1363
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VcBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic
Base Current
IB
Collector Power Dissipation
Ta=25°C Tc=25°C
PC
Junction Temperature Storage Temperature Range
T
j
T stg
ELECTRICAL CHARACTERISTICS (Ta==25°C)
RATING -70 -50 -5 -7 -1
UNIT V V V A A
1.5 40
150
-55-150
W
°C °C
INDUSTRIAL APPLICATIONS Unit in mm
ia3MAX.
7. 03.2x0.
2SB993 Datasheet
