2SB993 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

. High Collector Current : Ic 7A . Low Collector Saturation Voltage : VC E(sat)=-0.4V(Max. ) (at Ic=-4A) . High Collector Power Dissipation : P C=40W (at Tc=25°C) . Complementary to 2SD1363.

Toshiba

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Datasheet Details

Part number	2SB993
Manufacturer	Toshiba
File Size	133.12 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB993 Datasheet
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• SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB993 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES —. High Collector Current : Ic 7A . Low Collector Saturation Voltage : VC E(sat)=-0.4V(Max.) (at Ic=-4A) . High Collector Power Dissipation : P C=40W (at Tc=25°C) . Complementary to 2SD1363 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation Ta=25°C Tc=25°C PC Junction Temperature Storage Temperature Range T j T stg ELECTRICAL CHARACTERISTICS (Ta==25°C) RATING -70 -50 -5 -7 -1 UNIT V V V A A 1.5 40 150 -55-150 W °C °C INDUSTRIAL APPLICATIONS Unit in mm ia3MAX. 7. 03.2x0.

Published: Jul 17, 2018 |