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2SB994 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Collector Power Dissipation- : PC= 30W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -3A Complement to Type 2SD1354 Minimum Lot-to-Lot variations for robust device performance and reliable op

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Datasheet Details

Part number 2SB994
Manufacturer INCHANGE
File Size 212.17 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -3A ·Complement to Type 2SD1354 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 1.
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