• Part: 2SB994
  • Description: SILICON PNP TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 89.21 KB
Download 2SB994 Datasheet PDF
Toshiba
2SB994
2SB994 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES . Low Collector Saturation Voltage : Vc E(sat)=-1.0V(Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C=30W (Tc=25°C) . plementary to 2SD1354 Unit in mm : jl3ma^. 0&2±Q2 MAXIMUM RATINGS (Ta=25°C^> CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO v EBO ic Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temper ature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO l EBO v (BR)CE0 RATING -60 -60 -7 UNIT -3 -0.5 1.5 30 150 -55-150 JEDEC 1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER EI AJ TOSHIBA 2-10K1A Weight : 2. TEST CONDITION V C B=-60V, I E=0 VEB=-7V, IC=0 MIN. - TYP. MAX. - -100 - -100 UNIT m A dk I c=-50m A, I...