2SB994 - SILICON PNP TRANSISTOR

Toshiba

Key Features

. Low Collector Saturation Voltage : VcE(sat)=-1.0V(Max. ) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C=30W (Tc=25°C) . Complementary to 2SD1354 Unit in mm : jl3ma^. 0&2±Q2.

2SB994 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB994
Manufacturer	Toshiba
File Size	89.21 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB994 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB994	PNP Transistor	INCHANGE
2SB994	SILICON POWER TRANSISTOR	SavantIC
2SB991	PNP Transistor	INCHANGE
2SB992	PNP Transistor	INCHANGE
2SB992	SILICON POWER TRANSISTOR	SavantIC

Other Datasheets by Toshiba

Part Number	Description
2SB992	SILICON PNP TRANSISTOR
2SB993	SILICON PNP TRANSISTOR
2SB995	SILICON PNP TRANSISTOR
2SB996	SILICON PNP TRANSISTOR
2SB997	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SB994 SILICON PNP TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Low Collector Saturation Voltage : VcE(sat)=-1.0V(Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C=30W (Tc=25°C) . Complementary to 2SD1354 Unit in mm : jl3ma^. 0&2±Q2 MAXIMUM RATINGS (Ta=25°C^> CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO v EBO ic Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C IB Storage Temper ature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO lEBO v (BR)CE0 RATING -60 -60 -7 UNIT -3 -0.5 1.5 30 150 -55-150 JEDEC 1.