| Part number | 2SB996 |
|---|---|
| Datasheet | 2SB996-INCHANGE.pdf |
| File Size | 212.76 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·plement to Type 2SD1356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Remended for 20~25W high-fidelity audio frequency amplifier output stage.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB996 | SILICON PNP TRANSISTOR | Toshiba |
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