• Part: 2SB996
  • Description: SILICON PNP TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 89.22 KB
Download 2SB996 Datasheet PDF
Toshiba
2SB996
2SB996 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES . Good Linearity of hpg . plementary to 2SD1356 . Remended for 20-25W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 0&2x O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC Tstg RATING -80 -80 -5 -4 -0.4 -55~150 UNIT JEDEC 1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER TOSHIBA 2-10K1A Weight : 2.0g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO l EBO VCB=-80V, I E=0 VEB=-5V, I C=0 V(BR)CE0 IC=-50m A, Ib=0 DC Current Gain h FE(l) (Note) VCE=-5V, I C=-0.5A Collector-Emitter Saturation Voltage h FE(2) v CE(sat) VC E=-5V, I C=-3A I...