2SC1024
DESCRIPTION
- DC Current Gain -h FE = 25(Min)@ IC= 1.0A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 50V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO IC ICM IB PC TJ Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 5.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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