Datasheet Details
| Part number | 2SC1024 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1024-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1024.
| Part number | 2SC1024 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1024-INCHANGE.pdf |
|
|
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·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO IC ICM IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 3.0 A 5.0 A 1.0 A 25 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1024 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 3A ;
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