Datasheet Details
| Part number | 2SC1108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1108-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1108.
| Part number | 2SC1108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1108-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage ·High Current 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 3.125 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1108 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1108 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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