2SC1108 Datasheet | SavantIC

DESCRIPTION - With TO-220C package - High breakdown voltage :VCEO=100V - High current :4A APPLICATIONS - For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 4 40 150 -55~150 UNIT V V V A W ? ? Savant IC Semiconductor Product Specification Silicon NPN Power Transistors .. CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO h FE f T COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25m A; IB=0 IE=1m A; IC=0 IC=3A;IB=0.3 A IC=3A;IB=0.3 A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 25 100 MIN 100 5 TYP. UNIT V V 1.5 2.0 0.1 0.1 320 10 V V m A m A MHz p F Savant IC Semiconductor Product Specification Silicon NPN Power Transistors .. PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10...