Datasheet Details
| Part number | 2SC1113 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1113-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1113.
| Part number | 2SC1113 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1113-INCHANGE.pdf |
|
|
|
·High Current Capacity ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 6.0 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1113 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
Compare 2SC1113 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1113 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1111 | NPN Transistor |
| 2SC1112 | NPN Transistor |
| 2SC1114 | NPN Transistor |
| 2SC1115 | NPN Transistor |
| 2SC1116 | NPN Transistor |
| 2SC1102 | NPN Transistor |
| 2SC1106 | NPN Transistor |
| 2SC1108 | NPN Transistor |
| 2SC1140 | NPN Transistor |
| 2SC1141 | NPN Transistor |