Datasheet Details
| Part number | 2SC1115 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.65 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1115-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1115.
| Part number | 2SC1115 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.65 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1115-INCHANGE.pdf |
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·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 140 V 80 V 5 V 10 A 100 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1115 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
IB= 0.5A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1115 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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