Datasheet Details
| Part number | 2SC1161 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.18 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1161-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1161.
| Part number | 2SC1161 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.18 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1161-INCHANGE.pdf |
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·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for low frequency high voltage power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 6 V 1.0 A 15 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 8.33 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1161 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A;
IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1161 | SILICON POWER TRANSISTOR | SavantIC |
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