Inchange Semiconductor 2SC1162
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1162 |
|---|---|
| Datasheet | 2SC1162 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current IC= 2.5A●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min)
●Good Linearity of hFE
●Low Collector Saturation Voltage
●Complement to Type 2SA715
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 10 W 0.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1162 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1162ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Em...