High Collector Current IC= 2.5A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min)
Good Linearity of hFE
Low Collector Saturation Voltage
Complement to Type 2SA715
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current IC= 2.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SA715 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
3
A
10 W
0.
2SC1162 Datasheet
