SeCoS Halbleitertechnologie GmbH 2SC1162
NPN Transistor
| Part No. | 2SC1162 |
|---|---|
| Datasheet | 2SC1162 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Low frequency power amplifier TO-126 CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C Range 60~120 100~200 2SC1162-D 160~320 Collector ● Base Emitter Emitter Collector
●Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 35 35 5 2.5 750 150, -55~150 Unit V V V A mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V...