2SC1195 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1195 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=2.5A; IB= 0.5A VBE(ON) Base-Emitter On Voltage IC=1.0A; VCE= 5V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;.