Toshiba 2SC1195
SILICON NPN TRANSISTOR
APPLICATIONS
. HIGH VOLTAGE SWITCHINGAPPLICATIONS
.FEATURES
● High Voltage : VCEO=200V● Large Collector Current : Ic=2.5A Wide Safe Operating Area.
MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (T C =25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO V EBO ic IE pc T J T stg RATING 200 200 5 2.5 -2.5 100 150 -65 ^ 150 UNIT V V V A A W °C °c 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC TO-3 TC-3, TB-3 TOSHIBA 2-21A1A Mounting kit No. AC73 Weight : 12. OgELECTRICAL CHARACTERISTICS
CHARACTERISTIC (Ta=25°C) SYMBOL Collector Cut-off Current I CB0 I CE0 TEST CONDITION VCB=200V, IE=0 VCE =200V, I B=0 Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage I EB0 V (B