Datasheet Details
| Part number | 2SC1576 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.16 KB |
| Description | NPN Transistor |
| Download | 2SC1576 Download (PDF) |
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| Part number | 2SC1576 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.16 KB |
| Description | NPN Transistor |
| Download | 2SC1576 Download (PDF) |
|
|
|
·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 450 V 330 V 7 V 8 A 100 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1576 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=5A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC=5A;
IB= 0.8A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1576.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1576 | Silicon NPN Transistor | Toshiba |
 |
2SC1576 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1577 | NPN Transistor |
| 2SC1579 | NPN Transistor |
| 2SC1504 | NPN Transistor |
| 2SC1505 | NPN Transistor |
| 2SC1507 | NPN Transistor |
| 2SC1516 | NPN Transistor |
| 2SC1567 | NPN Transistor |
| 2SC1568 | NPN Transistor |
| 2SC1569 | NPN Transistor |
| 2SC1580 | NPN Transistor |