Toshiba 2SC1576
Silicon NPN Transistor
2SC1576 Specifications
- Max Collector Current : 8A
- Terminals : 2
- Collector Emitter Voltage : 330V
Source:
Octopart
| Part No. | 2SC1576 |
|---|---|
| Datasheet | 2SC1576 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
. HIGH VOLTAGE SWITCHINGAPPLICATIONS
.FEATURES
● High Voltage : VCBO=450V● Low Saturation Voltage : : VC E(sat)= 1.5V (Max.) (I C =5A, I B =0.8A)
● High Speed Switching Time : t s tg=3.0ys (Typ.) INDUSTRIAL
APPLICATIONS
Unit in ramMAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage v CBO v CEO Emitter-Base Voltage Vebo Collector Current ic Base Current Collector Power Dissipa- tion (Tc=25°C) Junction Temperature Storage Temperature Range IB PC T j Tstg RATING 450 330 6 8 2 100 150 -65M.50 UNIT V V V A A W °C °C 1 BASE 2. EMITTER COLLECTOR (CASE) TO 3, TB — 3ELECTRICAL CHARACTERISTICS
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Time Turn- on Time Storage Time Fall Time (Ta=25°C) SYMBOL I CB0 I
