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2SC1576 - Silicon NPN Transistor

Features

  • High Voltage : VCBO=450V.
  • Low Saturation Voltage : : VC E(sat)= 1.5V (Max. ) (I C =5A, I B =0.8A).
  • High Speed Switching Time : t s tg=3.0ys (Typ. ).

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Datasheet Details

Part number 2SC1576
Manufacturer Toshiba
File Size 120.67 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC1576 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED TYPE REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Voltage : VCBO=450V • Low Saturation Voltage : : VC E(sat)= 1.5V (Max.) (I C =5A, I B =0.8A) • High Speed Switching Time : t s tg=3.0ys (Typ.) INDUSTRIAL APPLICATIONS Unit in ram MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage v CBO v CEO Emitter-Base Voltage Vebo Collector Current ic Base Current Collector Power Dissipa- tion (Tc=25°C) Junction Temperature Storage Temperature Range IB PC T j Tstg RATING 450 330 6 8 2 100 150 -65M.50 UNIT V V V A A W °C °C 1 BASE 2.
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