Datasheet Details
| Part number | 2SC1580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1580-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1580.
| Part number | 2SC1580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1580-INCHANGE.pdf |
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·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 600 V 500 V 7 V 15 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1580 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=10A;
IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC=10A;
IB= 2A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Part Number | Description |
|---|---|
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| 2SC1507 | NPN Transistor |
| 2SC1516 | NPN Transistor |
| 2SC1567 | NPN Transistor |
| 2SC1568 | NPN Transistor |
| 2SC1569 | NPN Transistor |