Datasheet Details
| Part number | 2SC1617 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.29 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1617-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1617.
| Part number | 2SC1617 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.29 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1617-INCHANGE.pdf |
|
|
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·Silicon NPN triple diffused type ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 300 V 100 V 5 V 7 A 50 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1617 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A;
IB= 0.5A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
Compare 2SC1617 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC1617 | Silicon NPN Transistor | Toshiba |
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2SC1617 | SILICON POWER TRANSISTOR | SavantIC |
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