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2SC1617 - Silicon NPN Transistor

Key Features

  • High Voltage : VCBO=300V.
  • Wide Safe Oprating Area. Unit in mm.

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Datasheet Details

Part number 2SC1617
Manufacturer Toshiba
File Size 80.15 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC1617 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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; SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBO=300V • Wide Safe Oprating Area. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage v CEO Emitter-Base Voltage v EBO Collector Current ic Emitter Current XE Collector Power Dissipation Junction Temperature Storage Temperature Range pC T J T stg RATING 300 100 5 7 -7 50 150 -55M.50 UNIT V V V A A W °C °C 1. BASE 2. EMITTER COLLECTOR (CASE) TC - 3, TI 2 - 21A1A Mounting kit No. AC73 Weight : 12.