| Part Number | 2SC1617 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Silicon NPN triple diffused type ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·B. E(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC=1A; VCE= 5V ICBO Collector Cutoff . |
2SC1617 Datasheet
The 2SC1617 is a NPN Transistor.
| Part Number | 2SC1617 |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Toshiba |
| Overview |
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SILICON NPN TRIPLE DIFFUSED TYPE
BLACK AND WHITE TV HORIZONTAL OUTPUT APPLICATIONS.
FEATURES • High Voltage : VCBO=300V • Wide Safe Oprating Area.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERI.
* High Voltage : VCBO=300V * Wide Safe Oprating Area. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage v CEO Emitter-Base Voltage v EBO Collector Current ic Emitter Current XE Collector Power Dissipation Junction Temperatur. |
| Part Number | 2SC1617 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simpli. ut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IC=5A;IB=0.5 A IC=5A;IB=0.5 A VCB=250V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=5V 30 15 MIN 100 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT 2SC161. |