Datasheet Details
| Part number | 2SC1619 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.76 KB |
| Description | NPN Transistor |
| Download | 2SC1619 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1619.
| Part number | 2SC1619 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.76 KB |
| Description | NPN Transistor |
| Download | 2SC1619 Download (PDF) |
|
|
|
·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 100 V 80 V 6 V 6 A 50 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1619 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=4A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC=4A;
IB= 0.4A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1619 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1610 | NPN Transistor |
| 2SC1617 | NPN Transistor |
| 2SC1618 | NPN Transistor |
| 2SC1609 | NPN Transistor |
| 2SC1623 | NPN Transistor |
| 2SC1624 | NPN Transistor |
| 2SC1625 | NPN Transistor |
| 2SC1626 | NPN Transistor |
| 2SC1667 | NPN Transistor |
| 2SC1672 | NPN Transistor |