Datasheet Details
| Part number | 2SC1678 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.56 KB |
| Description | NPN Transistor |
| Download | 2SC1678 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1678.
| Part number | 2SC1678 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.56 KB |
| Description | NPN Transistor |
| Download | 2SC1678 Download (PDF) |
|
|
|
·Silicon NPN planar type ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.5 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1678 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A;
IB= 50mA ICBO Collector Cutoff Current VCB= 30V ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1678 | Silicon NPN Transistor | Toshiba |
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2SC1678 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1672 | NPN Transistor |
| 2SC1609 | NPN Transistor |
| 2SC1610 | NPN Transistor |
| 2SC1617 | NPN Transistor |
| 2SC1618 | NPN Transistor |
| 2SC1619 | NPN Transistor |
| 2SC1623 | NPN Transistor |
| 2SC1624 | NPN Transistor |
| 2SC1625 | NPN Transistor |
| 2SC1626 | NPN Transistor |