Datasheet Details
| Part number | 2SC1672 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1672-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1672.
| Part number | 2SC1672 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1672-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 120V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 25 A 120 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.25 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1672 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;
IB= 1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A;
IB= 2.0A VBE(sat) Base-Emitter Saturation Voltage IC= 20A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1672 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1678 | NPN Transistor |
| 2SC1609 | NPN Transistor |
| 2SC1610 | NPN Transistor |
| 2SC1617 | NPN Transistor |
| 2SC1618 | NPN Transistor |
| 2SC1619 | NPN Transistor |
| 2SC1623 | NPN Transistor |
| 2SC1624 | NPN Transistor |
| 2SC1625 | NPN Transistor |
| 2SC1626 | NPN Transistor |